shantou huashan electronic devices co.,ltd . applications power amplifier applications. complementary to ha1962. absolute maximum ratings t a =25 electrical characteristics t a =25 symbol characteristics min typ max unit test conditions bv cbo collector-base breakdown voltage 230 v i c =100 a, i e =0 bv ceo collector-emitter breakdown voltage 230 v i c =50ma, i b =0 bv ebo emitter-base breakdown voltage 5 v i e =100 a i c =0 i cbo collector cut-off current 5 a v cb =230v, i e =0 i ebo emitter cut-off current 5 a v eb =5v, i c =0 h fe 1 dc current gain 55 160 v ce =5v, i c =1a h fe 2 dc current gain 35 v ce =5v, i c =7a v ce(sat) collector- emitter saturation voltage 0.4 3 v i c =8a, i b =0.8a v be base-emitter voltage 1.5 v v ce =5v, i c =7a f t current gain-bandwidth product 30 mhz v ce =5v,i c =1a cob output capacitance 200 pf v cb =10v, i e =0 f=1 mhz h fe(1) classification r o 55 - 110 80 - 160 t stg storage temperature -65~150 t j junction temperature 150 p c collector dissipation tc=25 130w v cbo collector-base voltage 230v v ceo collector-emitter voltage 230v v ebo emitter-base voltage 5v i c collector current dc 15a i cp collector current pulse 30a ib base current 1.5a 1 D base b 2 D collector c 3 D emitter e to-3p HC5242 npn s i l i c o n t r a n s i s t o r
shantou huashan electronic devices co.,ltd . typical characteristics HC5242 npn s i l i c o n t r a n s i s t o r
shantou huashan electronic devices co.,ltd . package dimensions symbol millimeters a mm 15.60 0.20 a1 mm 13.60 0.20 a2 mm 9.60 0.20 b mm 19.90 0.20 b1 mm 13.90 0.20 b2 mm 12.76 0.20 b3 mm 3.80 0.20 c mm 20.00 0.30 c1 mm 3.50 0.20 c2 mm 16.50 0.30 d mm 5.45 typ d1 mm 2.0 0.20 d2 mm 3.0 0.20 d3 mm 1.00 0.20 e mm 4.80 0.20 0.15 e1 mm 1.50 0.05 e2 mm 1.40 0.20 f mm 18.70 0.20 0.15 g mm 0.60 0.05 ? mm 3.20 0.10 HC5242 npn s i l i c o n t r a n s i s t o r
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